Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-24
2007-04-24
Dickey, Thomas (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S309000, C257S310000, C257S311000, C257S297000
Reexamination Certificate
active
10995134
ABSTRACT:
A semiconductor device and a manufacturing method thereof in which the peripheral length of an aperture and the mechanical strength of cylinders in a cell can be increased without changing the occupation rate of patterns in the cell. By forming a slit in the middle of each mask pattern so as not to expose parts of wafer, the aperture of the wafer becomes nearly cocoon-shaped with a constriction in the middle. Thereby, the peripheral length of the aperture can be increased without changing the occupation rate of the mask patterns in a cell. Further, the shape of the bottom of the aperture also becomes nearly cocoon-shaped with a constriction in the middle, and therefore it is possible to increase the mechanical strength of cylinders.
REFERENCES:
patent: 6703273 (2004-03-01), Wang et al.
patent: 2002/0072190 (2002-06-01), Lee et al.
patent: 10-242417 (1998-09-01), None
“Nikkei Microdevices vol. 11” pp. 86-87, Nikkei Business Publications. Inc., Nov. 1, 2003, Flat Panels: Battleground for 2ndTV War.
Hiroshima Masahito
Nishida Takashi
Dickey Thomas
Erdem Fazli
Young & Thompson
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