Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-09-11

2007-09-11

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S132000, C438S215000, C438S333000, C438S467000, C438S601000

Reexamination Certificate

active

11078031

ABSTRACT:
A semiconductor device comprises a multiple insulation layer structure in which multiple insulation layers each having interconnection layer are built up and either one of the interconnection layer forming a fuse is blown in order to select a spare cell to relieve a defective cell; and an opening area corresponding to said fuse, the opening being formed on one or more insulation layers disposed above the layer which includes the fuse, wherein a side wall position corresponding to the opening of the first protective insulation film formed on the top layer of the multiple layers and a side wall position corresponding to the opening of the second protective insulation film formed on the first protective insulation film are continuous at the boundary thereof.

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U.S. Appl. No. 09/604,791, filed Jun. 28, 2000.
U.S. Appl. No. 09/411,590, filed Oct. 4, 1999.

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