Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-03-13

2007-03-13

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S759000, C438S928000

Reexamination Certificate

active

10694803

ABSTRACT:
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer11is provided over a substrate, an oxide layer12is provided in contact with the metal layer11, a layer to be peeled13is formed, and the metal layer11is irradiated with a laser beam to perform oxidization and form a metal oxide layer16, a clear separation is possible with a physical means within the metal oxide layer12or at an interface between the metal oxide layer16and the oxide layer12.

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