Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S758000
Reexamination Certificate
active
07084463
ABSTRACT:
A semiconductor device includes: a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions to be adjacent to said gate electrode; and an Al wiring through an interlayer insulating film covering said gate electrode, wherein impurity ions are implanted into a surface of said semiconductor substrate using as a mask said Al wiring, and a protection film is formed on the Al wiring so that the Al wiring is not exposed when said interlayer insulating film is etched.
REFERENCES:
patent: 5218568 (1993-06-01), Lin et al.
patent: 5378649 (1995-01-01), Huang
patent: 5772906 (1998-06-01), Abraham
patent: 5828097 (1998-10-01), Tanigawa
patent: 5874359 (1999-02-01), Liaw et al.
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 6133143 (2000-10-01), Lin et al.
patent: 6326269 (2001-12-01), Jeng et al.
patent: 6380066 (2002-04-01), See et al.
patent: 6518594 (2003-02-01), Nakajima et al.
patent: WO97/22995 (1997-06-01), None
patent: A-10-12734 (1998-01-01), None
patent: A-11-111862 (1999-04-01), None
patent: 11-233651 (1999-08-01), None
patent: 1998-14818 (1998-05-01), None
patent: 1999-05866 (1999-01-01), None
Ariyoshi Junichi
Yamada Junji
Yamada Yutaka
Fish & Richardson P.C.
Owens Douglas W
Sanyo Electric Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3681598