Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S758000

Reexamination Certificate

active

07084463

ABSTRACT:
A semiconductor device includes: a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions to be adjacent to said gate electrode; and an Al wiring through an interlayer insulating film covering said gate electrode, wherein impurity ions are implanted into a surface of said semiconductor substrate using as a mask said Al wiring, and a protection film is formed on the Al wiring so that the Al wiring is not exposed when said interlayer insulating film is etched.

REFERENCES:
patent: 5218568 (1993-06-01), Lin et al.
patent: 5378649 (1995-01-01), Huang
patent: 5772906 (1998-06-01), Abraham
patent: 5828097 (1998-10-01), Tanigawa
patent: 5874359 (1999-02-01), Liaw et al.
patent: 5937323 (1999-08-01), Orczyk et al.
patent: 6133143 (2000-10-01), Lin et al.
patent: 6326269 (2001-12-01), Jeng et al.
patent: 6380066 (2002-04-01), See et al.
patent: 6518594 (2003-02-01), Nakajima et al.
patent: WO97/22995 (1997-06-01), None
patent: A-10-12734 (1998-01-01), None
patent: A-11-111862 (1999-04-01), None
patent: 11-233651 (1999-08-01), None
patent: 1998-14818 (1998-05-01), None
patent: 1999-05866 (1999-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3681598

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.