Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-11-14

2006-11-14

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S149000, C438S507000, C438S273000, C438S285000, C438S268000, C257S077000, C257S080000, C257S401000, C257SE21060, C257SE21054, C257SE21062, C257SE21064

Reexamination Certificate

active

07135420

ABSTRACT:
Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the bulk. At this time, when an angle (off-angle) of inclination of the normal is decomposed into a component in a [001] direction and a component in a [010] direction, the component in the [001] direction is made within ±0.2 degrees (excluding 0 degree). An MOS transistor with a moving direction of carriers being the [001] direction is formed on the surface of the silicon substrate. At this time, after steps existing on the surface of the silicon substrate are reconstituted by thermal treatment in a hydrogen atmosphere, a gate insulation film, a gate electrode and the like are formed.

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