Semiconductor device and manufacturing method thereof

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S637000, C438S638000, C438S639000

Reexamination Certificate

active

07119011

ABSTRACT:
This semiconductor device includes a substrate60to be processed, a first insulation film64arranged at a designated position on the substrate60to have a via-hole71a, an organic film65formed on the first insulation film64and a second insulation film66formed on the organic film65. Both of the organic film65and the second insulation film66have a trench71bin communication with the via-hole71a, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic film65on the substrate60to be processed, forming a film having a designated pattern on the organic film65while exposing a part of the organic film65, and removing the exposed part of the organic film65from the substrate60to expose a foundation layer of the organic film65.

REFERENCES:
patent: 6498399 (2002-12-01), Chung et al.
patent: 2001-060582 (2001-03-01), None

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