Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-10
2006-01-10
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S316000, C257S321000, C438S700000, C438S701000, C438S694000, C438S695000, C438S696000
Reexamination Certificate
active
06984858
ABSTRACT:
In a semiconductor device including a plurality of element regions and an element isolation region based on STI (shallow trench isolation) which electrically isolates the element regions from each other, each of the element regions includes; a channel region; source/drain regions formed to sandwich the channel region in a horizontal direction; a gate insulation film which is formed on the channel region and in which an angle of a bird's beak is 1 degree or smaller, the bird's beak being formed from a side of the element isolation region on a surface opposite a surface facing the channel region in a horizontal direction substantially perpendicular to the direction in which the source/drain region sandwich the channel region; and a gate electrode layer formed on the gate insulation film.
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Iguchi Tadashi
Sakagami Eiji
Sonoda Masahisa
Tsunoda Hiroaki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Flynn Nathan J.
Forde Remmon R.
Kabushiki Kaisha Toshiba
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