Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-05-16

2006-05-16

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S402000, C257S404000, C257S408000, C257S411000, C257S391000

Reexamination Certificate

active

07045860

ABSTRACT:
The semiconductor device of this invention has a P type well region formed inside a P type semiconductor substrate, on which at least three gate insulating films each having a different thickness are formed. Also, the device has the gate electrode formed extending over the three gate insulating films. The ion implantation of the impurity for controlling the threshold voltage is performed only under the thinnest gate insulating film of the three gate insulating films.

REFERENCES:
patent: 4467452 (1984-08-01), Saito et al.
patent: 6121666 (2000-09-01), Burr
patent: 6232636 (2001-05-01), Simpson et al.
patent: 6255154 (2001-07-01), Akaishi et al.
patent: 6292183 (2001-09-01), Yamazaki et al.
patent: 6690070 (2004-02-01), Sekikawa et al.
patent: 4-44273 (1992-02-01), None
patent: 6-334129 (1994-12-01), None
patent: 9-64193 (1997-03-01), None
patent: 10-32262 (1998-02-01), None
patent: 11-163336 (1999-06-01), None
patent: 11-289061 (1999-10-01), None
patent: 1999-83271 (1999-11-01), None

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