Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-03-07

2006-03-07

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S303000, C257S401000, C257S344000, C257S408000

Reexamination Certificate

active

07008831

ABSTRACT:
A method of manufacturing a semiconductor device, including forming a gate insulating film on a P type semiconductor layer, forming on the gate insulating film a gate electrode having slits at, at least an end thereof on the drain electrode forming predeterminate side, selectively implanting an N type impurity into the P type semiconductor layer with the gate electrode as a mask, effecting heat treatment to activate the impurity and integrating impurity regions in which the impurity is implanted in the slits and portions outside the gate electrode, by transverse direction thereby to form a pair of N type low-density diffused layers that overlap, at least, on the drain electrode side of the gate electrode, and forming a pair of N type high-density diffused layers spaced away from the gate electrode.

REFERENCES:
patent: 5658808 (1997-08-01), Lin
patent: 6190981 (2001-02-01), Lin et al.
patent: 6555425 (2003-04-01), Huang et al.
patent: 6580129 (2003-06-01), Lui et al.
patent: 05-110071 (1993-04-01), None
patent: 09-205205 (1997-08-01), None
patent: 2002-289845 (2002-10-01), None

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