Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-01-03

2006-01-03

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S315000, C430S935000

Reexamination Certificate

active

06982141

ABSTRACT:
A GaAs substrate200is rotated, a photosensitive silicone resist260is applied on a surface of the GaAs substrate200on which an aperture of a hole310to be a via hole, and an inside of the hole310to be the via hole is filled in with the photosensitive silicone resist260.Next, the GaAs substrate200is further rotated, changing the number of revolutions (rpm), and the photosensitive silicone resist260on the GaAs substrate is flattened. Next, a reverse side of the GaAs substrate is grinded, the hole310to be the via hole penetrates the GaAs substrate200from the surface to the reverse side and the via hole220is formed. Next, a reverse side electrode240is formed on the reverse side of the GaAs substrate200.Next, the GaAs sustrate200is divided chip by chip and chips are laid on a substrate for assembly270via an adhesive metal280.

REFERENCES:
patent: 4571322 (1986-02-01), Eichelberger et al.
patent: 6440846 (2002-08-01), Ikeya
patent: 2001-110897 (2001-04-01), None

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