Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-05-16

2006-05-16

Luu, Chuong Anh (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S751000, C257S763000, C257S750000

Reexamination Certificate

active

07045898

ABSTRACT:
There is presented a structure in which outlines of a metal interconnection111that is laid in an interlayer insulating film are covered with a barrier metal film110.As the material for the barrier metal film110,TaN or the like is utilized.

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Japanese Office Action issued Feb. 28, 2001 in a related application with English translation of relevant portions.

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