Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S300000, C257S301000, C257S302000, C257S303000, C257S314000, C257S305000, C257S311000, C438S238000, C438S239000, C438S242000, C438S243000, C438S386000, C438S399000
Reexamination Certificate
active
06849890
ABSTRACT:
A semiconductor device comprises a semiconductor substrate having first conductivity type, a trench capacitor, provided in the substrate, having a charge accumulation region, a gate electrode provided on the substrate via a gate insulating film, a gate side wall insulating film provided on a side surface of the gate electrode, drain and source regions, provided in the substrate, having a second conductivity type, an isolation insulating film provided adjacent to the trench capacitor in the substrate to cover an upper surface of the charge accumulation region, a buried strap region having the second conductivity type, the buried strap region being provided to electrically connect an upper portion of the charge accumulation region to the source region in the substrate, and a pocket implantation region having the first conductivity type, the pocket implantation region being provided below the drain and source regions and being spaced apart from the strap region.
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Ortiz Edgardo
Wilson Allan R.
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