Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-02
1998-09-22
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438640, 438700, H01L 21441
Patent
active
058113533
ABSTRACT:
A semiconductor device has a semiconductor material substrate, a first insulating film formed on the substrate, a first metallic wiring formed partly on the first insulating film, a second insulating film formed on the first insulating film, a second metallic wiring formed partly on the second insulating film and a via hole for electrically connecting the first metallic wiring and the second metallic wiring. The via hole has a lower portion which extends below the level of a top face of the first metallic wiring and is tapered to help keep the via hole electrically insulated from the substrate.
REFERENCES:
patent: 5441595 (1995-08-01), Yamagata et al.
patent: 5702981 (1997-12-01), Maniar et al.
Everhart Caridad
Ricoh & Company, Ltd.
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