Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1997-11-04

2000-09-12

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 218228

Patent

active

06118148&

ABSTRACT:
In a CMOS circuit, impurity regions are formed in the channel forming region of each of an n-channel and p-channel transistors along the channel direction. The intervals between the impurity regions in the n-channel transistor is set narrower than those between the impurity regions in the p-channel transistor so as to make the absolute values of the threshold voltages of the n-channel and p-channel transistors approximately equal to each other. Where active layers are formed by utilizing a crystal structural body that is a collection of needle-like or columnar crystals, the same effect can be attained by controlling the width of the needle-like or columnar crystals.

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