Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-12-27

2005-12-27

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S208000, C257S239000, C257S261000, C257S298000, C257S315000

Reexamination Certificate

active

06979860

ABSTRACT:
A plurality of first wiring structures of a first width are arranged periodically at first intervals. A second wiring structure is formed next to one of the first wiring structures. The lower part of the second wiring structure has a second width substantially equal to the sum of n times the first width of the first wiring structure (n is a positive integer equal to two or more) and (n−1) times the first interval.

REFERENCES:
patent: 6034894 (2000-03-01), Maruyama et al.
patent: 6240012 (2001-05-01), Nakamura et al.
patent: 6353242 (2002-03-01), Watanabe et al.
patent: 56-137632 (1981-10-01), None
patent: 2000-22113 (2000-01-01), None
patent: 2002-176114 (2002-06-01), None
patent: 2003-51557 (2003-02-01), None

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