Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-04
2005-10-04
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S626000, C438S629000, C438S638000
Reexamination Certificate
active
06951807
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, an interlayer insulating layer formed above the semiconductor substrate, a first metal interconnection embedded in the interlayer insulating layer with a surface thereof exposed to the same plane as a surface of the interlayer insulating layer, a diffusion preventive layer formed on at least the first metal interconnection to prevent diffusion of a metal included in the first metal interconnection, a nitrogen-doped silicon oxide layer formed on the diffusion preventive layer, a fluorine-doped silicon oxide layer formed on the nitrogen-doped silicon oxide layer, and a second metal interconnection embedded in the fluorine-doped silicon oxide layer with a surface thereof exposed to the same plane as a surface of the fluorine-doped silicon oxide layer, and electrically connected to the first metal interconnection.
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Copy of “Notification for Filing Opinion,” issued by the Korean Patent Office on May 4, 2005 in counterpart foreign Application No. 10-2002-0044737 and its English translation.
Nishiyama Yukio
Watanabe Kei
Finnegan Henderson Farabow Garrett & Dunner, LLP.
Kabushiki Kaisha Toshiba
Trinh Michael
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