Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2005-10-25

2005-10-25

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S124000, C438S128000

Reexamination Certificate

active

06958288

ABSTRACT:
In a semiconductor device manufacturing process using a low-dielectric-constant insulation film as an interlayer insulation film, a stress exerted on wiring layers and interlayer insulation films is reduced. In a semiconductor device in which a plurality of buried wiring layers are formed in the interlayer insulation films each formed of a low-dielectric-constant insulation film lower in mechanical strength than a silicone oxide film formed by, for example, a CVD method, a first layer of wiring, on a lower layer of which a low-dielectric-constant insulation film is not disposed, serves as a bonding pad, and bump electrodes are formed on the wiring so as to become higher than a position where the uppermost buried wiring is formed.

REFERENCES:
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2003/0020163 (2003-01-01), Hung et al.
patent: 11340319 (1998-05-01), None
patent: 2001267323 (2000-03-01), None

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