Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip

Reexamination Certificate

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Details

C257S779000, C257S780000, C438S108000, C438S613000

Reexamination Certificate

active

06946741

ABSTRACT:
A semiconductor device is provided which includes a first semiconductor chip, a substrate onto which the first semiconductor chip is flip-chip bonded and on which a concave is formed along one side of the first semiconductor chip which is flip-chip bonded, a second semiconductor chip which is flip-chip bonded onto a portion on the substrate opposite the first semiconductor chip across the concave on the substrate, and a resin applied to spaces between the substrate and the first and second semiconductor chips.

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patent: 6300685 (2001-10-01), Hasegawa et al.
patent: 6404062 (2002-06-01), Taniguchi et al.
patent: 6507098 (2003-01-01), Lo et al.
patent: 6770543 (2004-08-01), Nakamura
patent: A 63-124425 (1988-05-01), None
patent: 05175361 (1993-07-01), None
patent: 2000-003922 (2000-01-01), None
patent: A 2002-208670 (2002-07-01), None

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