Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-11
1999-01-26
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257348, 257384, H01L 2701, H01L 2712, H01L 2976
Patent
active
058641610
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming an insulating film on a silicon region of a substrate having the silicon region on a surface the insulating film having an opening for forming an exposed region of the silicon region, supplying a gas containing a halogen onto the silicon region, and supplying a source gas of silicon onto the silicon region, thereby selectively depositing the silicon on the exposed region of the silicon region.
REFERENCES:
patent: 5496744 (1996-03-01), Ishimaru
patent: 5567966 (1996-10-01), Hwang
Kambayashi Shigeru
Kashiwagi Masahiro
Mitani Yuichiro
Mizushima Ichiro
Nishino Hirotaka
Fahmy Wael
Kabushiki Kaisha Toshiba
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