Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1993-10-06

1995-03-07

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257357, 257373, 257376, 257408, 257544, 257547, 437 34, 437 45, 437 56, 437 74, 437913, H01L 2978, H01L 21265

Patent

active

053960963

ABSTRACT:
In a semiconductor device, a FET and an isolation are provided on a semiconductor substrate and a channel stop region is provided under the isolation. At least a region to which a high voltage is applied of a source region and a drain region of the FET is separated from the channel stop region, and a first buffer region doped with an impurity for adjusting the threshold level is provided therebetween. A region under a gate electrode and adjacent to the isolation serves as a second buffer region to which an impurity for adjusting the threshold level is doped. With the first buffer region, a depletion region at a boundary of the drain region and the channel stop region is ensured, obtaining a superior durability to high voltage of the source/drain region. With the second buffer region, leakage current between the source region and the drain region is prevented.

REFERENCES:
patent: 5144389 (1992-09-01), Nakamura et al.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1408137