Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2002-12-31
2004-09-21
Fahmy, Wael (Department: 2814)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S113000, C438S458000, C438S460000, C438S464000, C438S108000, C257S620000, C257S618000, C257S778000
Reexamination Certificate
active
06794273
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to a semiconductor device and particularly relates to a manufacturing method of a semiconductor device that is packaged with a fine-structured interposer that is fabricated using a silicon substrate.
2. Description of the Related Art
In a semiconductor device of the above-described type, semiconductor chips are mounted on an interposer. Accordingly, along with recent developments in semiconductor chips having finer and thinner structures, efforts are being made to provide interposers (wiring substrates or rearranging substrates) having finer and thinner structures. Interposers are normally made by forming a stack of insulating layers and conductive layers that serve as interconnections.
Recently, it has been proposed to fabricate interposers using a fine-machining technique such as a photolithography technique used in a semiconductor chip manufacturing device. Generally, in such an interposer manufacturing process using a photolithography technique, interconnection patterns and insulating layers are stacked on one side of a silicon substrate and lands of external connection mounting terminals are formed on the other side of the silicon substrate. The lands and the interconnection patterns which are on opposite sides of the silicon substrate are electrically connected by vias formed through the silicon substrate.
By using a silicon substrate, wiring patterns and insulating layers of an interposer can be formed in a manner similar to a process of manufacturing a semiconductor chip. Therefore, there is an advantage that a fine- and multilayer-structured interposer can be formed.
According to the above-mentioned interposer manufacturing method using a silicon wafer, it is necessary to perform the steps of forming through-holes in the silicon substrate for providing vias connecting front and sides the interposer, give an insulation treatment in which SiO2 layers are formed on inner surfaces of the through-holes and filling the through-holes with plating layers. The silicon substrate has a certain thickness for sustaining sufficient strength during the interposer manufacturing process. Therefore, in order to form through-holes through such a silicon substrate and to give insulation and plating treatments on the inner surfaces of the through-holes, expensive devices are used with increased machining time. This results in an increase of manufacturing cost for interposers.
The silicon substrate itself is provided for sustaining the strength and is not necessary for the function of the interposer. However, since the thickness of the silicon substrate itself is greater than the thicknesses of the wiring patterns and the insulation layers, an overall thickness of the interposer becomes comparatively great due to the thickness of the silicon substrate.
Further, in a process step of filling the plating layers in the through-holes, it is technically difficult to prevent voids in the plating layer that may lead to lower conductivity and reduced reliability.
Further, since the silicon substrate is very thin, it is difficult to handle the interposer as a single body during a manufacturing process.
Also, there is a problem with the semiconductor device in which the silicon substrate is provided with an interposer attached on one side and an insulating layer attached on the other side in that the interposer itself might warp. In such a case, it is difficult to mount LSI chips having fine-pitched electrodes onto the interposer.
SUMMARY OF THE INVENTION
Accordingly, it is a general object of the present invention to provide a method of manufacturing semiconductor devices that can obviate the problems described above.
It is another and more specific object of the present invention to provide a method of manufacturing a semiconductor device with an interposer wherefrom a silicon substrate for sustaining the strength during manufacture is removed.
In order to achieve the above objects, the present invention provides a method of manufacturing a semiconductor device using a wiring substrate, which includes the steps of:
a) forming a peelable resin layer on a silicon substrate, the peelable resin layer having a lower adhesiveness to the silicon substrate and being easily peelable from the silicon substrate;
b) forming the wiring substrate on the peelable resin layer;
c) mounting a plurality of semiconductor chips on the wiring substrate;
d) forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin;
e) individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate;
f) peeling each of the individualized semiconductor devices from the silicon substrate such that the silicon substrate and the peelable resin layer are separated; and
g) exposing terminals provided on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.
According to the invention described above, the silicon substrate can be easily peeled off from the semiconductor devices by providing the peeling resin layer. Therefore, it is no longer necessary to perform a step of exposing terminals of the wiring board by processing the silicon wafer. Also, the thickness of the semiconductor device can be reduced by a thickness of the silicon substrate to be removed.
The present invention further provides a method of manufacturing the semiconductor device using a wiring substrate, which includes the steps of:
a) forming a peelable resin layer on a silicon substrate, the peelable resin layer having a lower adhesiveness to a wiring substrate and being easily peelable from a wiring substrate;
b) forming the wiring substrate on the peelable resin layer;
c) mounting a plurality of semiconductor chips on the wiring substrate;
d) forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin;
e) individualizing the semiconductor devices by dicing the semiconductor devices from the sealing resin side but leaving the silicon substrate; and
f) peeling each of the individualized semiconductor devices from the silicon substrate such that the silicon substrate and the peelable resin layer are separated.
According to the invention described above, the silicon substrate and the peelable resin can be easily peeled off from the semiconductor devices by providing the peeling resin layer. Therefore, it is no longer necessary to perform a step of exposing terminals of the wiring board by processing the silicon wafer. Also, the thickness of the semiconductor device can be reduced by a thickness of the silicon substrate to be removed. Also, the peelable resin layer may be removed.
The present invention further provides a method of manufacturing the semiconductor device using a wiring substrate, including the steps of:
a) forming a peelable resin layer on a silicon substrate, the peelable resin layer having a lower adhesiveness to the silicon substrate and being easily peelable from the silicon substrate;
b) forming the wiring substrate on the peelable resin layer;
c) mounting a plurality of semiconductor chips on the wiring substrate;
d) forming semiconductor devices by sealing the plurality of semiconductor chips by a sealing resin;
e) thinning the silicon substrate by a grinding process;
f) peeling the semiconductor devices from the silicon substrate with the peelable resin layer being attached to the thinned silicon substrate such that the silicon substrate and the peelable resin layer are separated;
g) individualizing the semiconductor devices by dicing the semiconductor devices; and
h) exposing terminals provided on the wiring substrate by forming openings through the peelable resin layer or by removing the peelable resin layer.
According to the invention described above, the silicon substrate becomes flexible by thinning the silicon substrate, and as a result of a synergy effect with the low-adhesiveness of the peelable resin layer, the silicon substrate can be easily peel
Imamura Kazuyuki
Kikuchi Atsushi
Minamizawa Masaharu
Okamoto Tadahiro
Saito Nobukatsu
Fahmy Wael
Nguyen DiLinh
Westerman Hattori Daniels & Adrian LLP
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