Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-22
2000-09-12
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257300, 257306, H01L 27108
Patent
active
061181455
ABSTRACT:
A semiconductor device with a reduced slope between components, and a method of manufacturing a semiconductor device, represented by DRAM, having a large difference of level between components, for planarizing an inter-layer insulating film covering respective components in accordance with a design to precisely reduce a slope of the inter-layer insulating film over the difference in level between components, without increasing the number of manufacturing steps or introducing complicated manufacturing steps. Each storage node electrode connected to a source is formed, and an electrically isolated dummy pattern is simultaneously formed on an inter-layer insulating film. Then, a BPSG film is formed and reflowed, followed by etching back the surface of the BPSG film. Subsequently, the dummy pattern is used as an index for indicating the end of the etch back, and the BPSG film is etched back until a portion of a cell plate electrode covering the dummy pattern is exposed.
REFERENCES:
patent: 5136533 (1992-08-01), Harari
patent: 5399890 (1995-03-01), Okada et al.
patent: 5519237 (1996-05-01), Itoh et al.
patent: 5557566 (1996-09-01), Ochii
Meier Stephen D.
Nippon Steel Corporation
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