Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2008-04-22

2008-04-22

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S610000, C438S644000, C257SE21021

Reexamination Certificate

active

07361590

ABSTRACT:
A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.

REFERENCES:
patent: 7180197 (2007-02-01), Nishi et al.
patent: 2004/0245648 (2004-12-01), Nagasawa et al.
patent: 1354513 (2002-06-01), None
patent: 1564726 (2005-01-01), None
patent: 2004-128357 (2004-04-01), None
patent: WO 03/077311 (2003-09-01), None
“Metal Data Book,” Published by Seisiro Murata, Mar. 25, 1993, pp. 96-97.
E. Ide, et al., “The Novel Bonding Process Using Ag Nanoparticles—Investigation on Bondability to Cu-,” Mate 2004, pp. 213-218.
Y. Saito, et al., “High Temperture Oxidation of Metals,” Published by Uchida Rokakuho Publishing Co., Ltd., Dec. 10, 1996, p. 10.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2800589