Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2008-04-15
2008-04-15
Im, Junghwa M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S789000, C257S787000, C257S790000, C257S737000, C257S738000, C257S778000, C257S780000, C257S736000, C257S748000, C257S750000, C257SE23021, C257SE23023, C257SE23020
Reexamination Certificate
active
07358618
ABSTRACT:
A semiconductor device having a semiconductor substrate, at least one of a protruding electrode and wiring formed on one surface of the semiconductor substrate, and a first resin film formed on this surface. The first resin film has elasticity low enough to reduce stress induced by a difference in thermal expansion coefficient between the semiconductor substrate and the first resin film. A second resin film, having higher elasticity or higher strength than the first resin film, may be formed on the other surface of the semiconductor substrate.
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Im Junghwa M.
Rabin & Berdo P.C.
Rohm & Co., Ltd.
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