Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-22
2008-01-22
Lee, Calvin (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S748000
Reexamination Certificate
active
07320932
ABSTRACT:
A semiconductor device of the present invention is furnished with (a) a first protection film, formed on a substrate, having an opening section on an electrode pad, (b) a protrusion electrode, connected on the electrode pad at the opening section, whose peripheral portion is formed to overlap the first protection film, (c) a second protection film, formed to cover at least a gap at a boundary portion of the first protection film and the protrusion electrode, having an opening on a top area of the protrusion electrode except a portion around the boundary portion of the first protection film and the protrusion electrode, and (d) a coating layer formed to cover a surface of the protrusion electrode at the opening of the second protection film. With this arrangement, it is possible to provide a semiconductor device wherein the protrusion electrode is formed with an electroless plating method, capable of preventing the lowering of the adhesion strength of the protrusion electrode to the electrode pad.
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U.S. Appl. No. 10/326,976, filed Dec. 24, 2002.
Japanese Office Action mailed Feb. 8, 2005 (w/English translation thereof).
Asazu Takuro
Ono Atsushi
Yamaguchi Shinji
Lee Calvin
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
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