Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-03-15

2011-03-15

Roman, Angel (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

C257S734000, C257S737000, C257S772000, C257S787000, C257SE23179

Reexamination Certificate

active

07906833

ABSTRACT:
A method for manufacturing a semiconductor device has preparation step of preparing a semiconductor substrate having a plurality of semiconductor chip formation regions and a scribe region arranged between the plurality of the semiconductor chip formation regions and including a substrate cutting position, a semiconductor chip formation step of forming semiconductor chips having electrode pads on the plurality of semiconductor chip formation regions, a first insulation layer formation step of forming a first insulation layer on the semiconductor chips and the scribe region of the semiconductor substrate, a second insulation layer formation step of forming a second insulation layer on the first insulation layer except for a region corresponding to the substrate cutting position, and a cutting step of cutting the semiconductor substrate at the substrate cutting position.

REFERENCES:
patent: 2002/0008320 (2002-01-01), Kuwabara et al.
patent: 2002/0025655 (2002-02-01), Satoh et al.
patent: 2004/0032026 (2004-02-01), Yang et al.
patent: 2004/0115868 (2004-06-01), Ono
patent: 2004/0115902 (2004-06-01), Hanaoka
patent: 2007/0007664 (2007-01-01), Lee et al.
patent: 09-064069 (1997-03-01), None
patent: 2002-313985 (2002-10-01), None
patent: 2002-329809 (2002-11-01), None

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