Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S328000, C257S329000, C257S331000, C257S334000, C257SE21382, C257SE21383, C257SE21384, C257SE21385, C257SE29197, C257SE29198, C257SE29200, C257SE29201, C438S197000, C438S268000, C438S270000
Reexamination Certificate
active
07986003
ABSTRACT:
A carrier storage layer is located in a region of a predetermined depth from a surface of an N− substrate, a base region is located in a shallower region than the predetermined depth and an emitter region is located in a surface of the N− substrate. The carrier storage layer is formed by phosphorus injected to have a maximum impurity concentration at the predetermined depth, the base region is formed by boron injected to have the maximum impurity concentration at a shallower position than the predetermined depth and the emitter region is formed by arsenic injected to have the maximum impurity concentration at the surface of the N− substrate. An opening is formed to extend through the emitter region, base region and the carrier storage layer. On the inner wall of the opening, a gate electrode is formed with a gate insulating film therebetween.
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Aono Shinji
Moritani Junichi
Takahashi Hideki
Tomomatsu Yoshifumi
Gurley Lynne A
Kearney Naima J
Mitsubishi Electric Corporation
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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