Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1992-09-30

1994-08-23

Fears, Terrell W.

Static information storage and retrieval

Format or disposition of elements

365149, G11C 1124

Patent

active

053413245

ABSTRACT:
A gate electrode of a P-channel MOS transistor and a gate electrode of an N-channel MOS transistor which constitute a logic section, a gate electrode of an N-channel MOS transistor and a capacitor electrode which constitute a memory cell section are formed by patterning a first layer of polysilicon, so that the semiconductor device can be manufactured in a considerably simplified process as an SRAM, while taking advantage of the large capacity of a DRAM thereby to improve the yield.

REFERENCES:
patent: 4887135 (1989-12-01), Cheney et al.
patent: 4929989 (1990-05-01), Hayano
patent: 5047985 (1991-09-01), Miyaji
patent: 5181188 (1993-01-01), Yamachi

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-507696