Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-19
1993-05-04
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257328, 257489, H01L 2910, H01L 2978, H01L 2940
Patent
active
052084710
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a semiconductor layer of a first conductivity type formed on said semiconductor substrate, a first semiconductor well region of a second conductivity type and second semiconductor well regions of the second conductivity type, the latter two types of regions being formed in said semiconductor layer. The first semiconductor well region is located at the peripheral area of the semiconductor, and the well is deeper than the well of the second semiconductor well regions. Third semiconductor well regions of the first conductivity type are formed in the second semiconductor well regions. Gate electrodes and an emitter (source) electrode are formed at specified positions on the upper surface of the semiconductor device, and a collector (drain) electrode is formed on the bottom surface.
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Mori Mutsuhiro
Nakano Yasunori
Yasuda Yasumichi
Hitachi , Ltd.
James Andrew J.
Meier Stephen D.
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