Active solid-state devices (e.g. – transistors – solid-state diode – Including region containing crystal damage
Patent
1994-07-25
1996-09-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Including region containing crystal damage
257905, 257906, 437 11, 437 12, 437 24, 437 26, H01L 31117
Patent
active
055548830
ABSTRACT:
A semiconductor device includes a buried impurity layer (3) formed at a predetermined depth from a main surface of a semiconductor substrate (1) by utilizing ion injection of a conductivity type determining element, and a gettering layer (2) formed in a position adjacent to and not shallower than the buried impurity layer (3) by utilizing ion injection of an element other than a conductivity type determining element.
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Carroll J.
Mitsubishi Denki & Kabushiki Kaisha
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