Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-04-26
2005-04-26
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S152000, C438S157000, C438S164000, C257S064000, C257S066000, C257S072000
Reexamination Certificate
active
06884668
ABSTRACT:
To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.
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Isobe Atsuo
Miyairi Hidekazu
Takano Tamae
Yamazaki Shunpei
Kang Donghee
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
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