Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

2011-03-22

2011-03-22

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S334000

Reexamination Certificate

active

07910988

ABSTRACT:
A semiconductor device including a trench-gate MOS transistor on a semiconductor substrate is constituted of a trench formed in an active region, a fin channel region formed between a separation region and the trench in the active region, a first gate electrode embedded in the separation region in connection with the fin channel region via a first gate insulating film, a second gate electrode embedded in the trench in connection with the fin channel region via a second gate insulating film, and a source-drain diffusion region disposed beside the trench in the active region below the second gate electrode.

REFERENCES:
patent: 2009/0230464 (2009-09-01), Taketani
patent: 2007-158269 (2007-06-01), None
patent: 2007-258660 (2007-10-01), None

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