Semiconductor device and manufacturing method therefor

Details Semiconductor device and manufacturing method therefor Semiconductor device and manufacturing method therefor

1996-09-12

1998-03-31

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 24, H01L 310312, H01L 2906, H01L 310328, H01L 310336

Patent

active

057341818

ABSTRACT:
A semiconductor device having a MISFET includes: a silicon substrate (2) having a semiconductor region on a surface thereof; a source region (10a) and a drain region (10b) formed in the semiconductor region separately; a channel region formed in the semiconductor region and between the source region and the drain region; a gate electrode (6) formed on the channel region; and a region (8a) formed of Si.sub.1-x C.sub.x overlapping the source region and having a carbon concentration enough to increase an energy gap therein beyond that in the channel region. Further, the MISFET is constructed in such a way that a hetero-junction surface formed between the region formed of Si.sub.1-x C.sub.x (8a) and the other portion of the semiconductor region on the side of the channel region exists at an interface between the source region (10a) and the channel region or in the vicinity thereof, in order to realize a high speed operation, even if the device is microminiaturized.

REFERENCES:
patent: 5103285 (1992-04-01), Furumura et al.
patent: 5561302 (1996-10-01), Candelaria
J. Gryko et al., "Energy Band Gaps of Silicon-Carbon Alloys", Physical Review, vol. 51, No. 11, Mar. 1995, pp. 7295-7298.

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