Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2005-11-16

2010-06-15

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S510000

Reexamination Certificate

active

07737053

ABSTRACT:
An RTA method has a limitation on miniaturization. The RTA method needs a heating time of several seconds, and has a risk that impurities are diffused into a deep portion, since a semiconductor substrate is heated at a high temperature. Thus, the RTA method has a difficulty in responding miniaturization which is expected in the future. According to the present invention, a fundamental wave is used without putting laser light into a non-linear optical device, and laser annealing is conducted by irradiating an impurity diffusion layer with pulsed laser light having high intensity and a high repetition rate, so as to electrically activate the impurities. By the present invention, a thin layer on the surface of a silicon substrate can be partially melted to conduct activation. Further, the width of the region activated by laser-scanning once can be increased, and thus the productivity can be enhanced dramatically.

REFERENCES:
patent: 6380044 (2002-04-01), Talwar et al.
patent: 6559015 (2003-05-01), Yu
patent: 6642122 (2003-11-01), Yu
patent: 6703281 (2004-03-01), Yu
patent: 6743687 (2004-06-01), Yu
patent: 6743689 (2004-06-01), Paton et al.
patent: 6869865 (2005-03-01), Maegawa et al.
patent: 2002/0018288 (2002-02-01), Rieger et al.
patent: 2002/0086502 (2002-07-01), Liu et al.
patent: 2002/0121654 (2002-09-01), Yamamoto
patent: 2002/0175372 (2002-11-01), Takizawa
patent: 2003/0085720 (2003-05-01), Yamazaki et al.
patent: 2003/0227056 (2003-12-01), Wang et al.
patent: 2004/0087118 (2004-05-01), Maegawa et al.
patent: 2004/0132249 (2004-07-01), Mitsuda et al.
patent: 2004/0169023 (2004-09-01), Tanaka
patent: 2006/0091122 (2006-05-01), Sugioka et al.
patent: 2006/0121680 (2006-06-01), Tanaka
patent: 2007/0178672 (2007-08-01), Tanaka et al.
patent: 2001-308344 (2001-11-01), None
patent: 2001-338894 (2001-12-01), None
patent: 2002-151431 (2002-05-01), None
patent: 2002-246329 (2002-08-01), None
patent: 2002-246601 (2002-08-01), None
patent: 2003-059857 (2003-02-01), None
patent: 2004-158627 (2004-06-01), None
patent: 2004-214607 (2004-07-01), None
Machine translation of JP2001-308344.
WO 03/099508 Riken et al.
International Search Report (Application No. PCT/JP2005/021397) dated Feb. 7, 2006.
Written Opinion (Application No. PCT/JP2005/021397) dated Feb. 7, 2006.

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