Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-11-28

2010-06-01

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S298000, C257S300000, C257S532000, C257SE29343

Reexamination Certificate

active

07728370

ABSTRACT:
A stacked film of a first insulation film being a silicon oxide film with an extremely low moisture content, and a second insulation film being a silicon oxide film with a higher moisture content than the first insulation film, therefore, with a low in-plane film thickness distribution rate is formed, and this is polished by CMP. Polishing is performed until the second insulation film is wholly removed directly above a ferroelectric capacitor structure and a surface of the first insulation film is exposed to some extent. At this time, surface flattening is performed for a top surface of a first portion in the first insulation film and a top surface of the second insulation film, and an interlayer insulation film constituted of the first insulation film and the second insulation film remaining on a second portion of the first insulation film is formed.

REFERENCES:
patent: 6611014 (2003-08-01), Kanaya et al.
patent: 6982453 (2006-01-01), Kanaya et al.
patent: 7132709 (2006-11-01), Nagano et al.
patent: 2004/0084701 (2004-05-01), Kanaya et al.
patent: 2002-280528 (2002-09-01), None

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