Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2008-07-10

2009-08-11

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S155000, C257S330000

Reexamination Certificate

active

07572687

ABSTRACT:
Disclosed is a semiconductor device. The semiconductor device includes a first gate formed in a trench of a semiconductor substrate, a first gate oxide layer on the semiconductor substrate including the first gate, a first epitaxial layer on the first gate oxide layer, first source and drain regions in the first epitaxial layer at sides of the first gate, an insulating layer on the first epitaxial layer, a second epitaxial layer on the insulating layer, a second gate oxide layer on the second epitaxial layer, a second gate on the second gate oxide layer, and second source and drain regions in the second epitaxial layer below sides of the second gate.

REFERENCES:
patent: 6822288 (2004-11-01), Hshieh et al.
patent: 2003/0075760 (2003-04-01), Osawa

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