Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2006-06-13

2009-08-18

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S737000, C257S750000, C257S766000, C257S773000, C257SE23132, C438S614000, C438S612000, C438S613000, C438S652000, C438S666000, C438S678000

Reexamination Certificate

active

07575994

ABSTRACT:
The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

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European Search Report mailed on Aug. 5, 2008 directed towards counterpart foreign application No. 06012323.9; 6 pages.

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