Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2007-01-30

2007-01-30

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S420000, C438S426000, C438S429000, C438S436000, C438S437000

Reexamination Certificate

active

10983746

ABSTRACT:
Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the wiring layer equal to the first wiring structure and including a second plug and a second wiring formed on the second plug, wherein the upper surface of the first wiring is positioned higher than the upper surface of the second wiring, and the lower surface of the first wiring is positioned flush with or lower than the upper surface of the second wiring. The present invention also provides a method of manufacturing the particular semiconductor device.

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