Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2006-08-08

2006-08-08

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000

Reexamination Certificate

active

07087957

ABSTRACT:
A semiconductor device includes a compound semiconductor substrate, a channel layer provided on the compound semiconductor substrate, a buried layer provided on the channel layer, a first recess formed in the buried layer in an E-mode region, a second recess formed in the first recess in the E-mode region and another second recess formed in the buried layer in a D-mode region, and a gate electrode provided in the second recess in the E-mode region and another gate electrode provided in the second recess in the D-mode region, and a distance between a surface of the buried layer and a bottom of the second recess in the E-mode region is shorter than another distance between another surface of the buried layer and a bottom of said another second recess in the D-mode region.

REFERENCES:
patent: 4733283 (1988-03-01), Kuroda
patent: 5021857 (1991-06-01), Suehiro
patent: 5-13464 (1993-01-01), None
H. Tosaka et al., “An Antenna Switch MMIC using E/D Mode p-HEMT for GSM/DCS/PCS/WCDMA Bands Application”, 2003 IEEE MTT-S Digest, IFTU-50, pp. 5-8.

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