Semiconductor device and manufacturing method of the same

Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell

Reexamination Certificate

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Details

C257S904000, C257S401000, C257S368000, C257S369000

Reexamination Certificate

active

07061128

ABSTRACT:
A semiconductor device according to the present invention includes: a semiconductor substrate including an active region and an isolation region; a gate electrode formed on the active region with an oxide film interposed therebetween; and a set of impurity regions formed on both sides of the gate electrode. A surface of the active region is entirely rounded so as to be inclined downward toward the isolation region. This rounded shape can be formed by forming an isolation oxide film such that a bird's beak portion is connected on the active region.

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patent: 5592013 (1997-01-01), Honda
patent: 5945715 (1999-08-01), Kuriyama
patent: 6117721 (2000-09-01), Dennison et al.
patent: 6169020 (2001-01-01), Kim et al.
patent: 6707112 (2004-03-01), Kachelmeier
patent: 1993-9059 (1993-05-01), None
patent: 5-198570 (1993-08-01), None
patent: 2000-200878 (2000-07-01), None

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