Semiconductor device and manufacturing method of the same

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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Details

C257S710000, C257S924000, C257S723000, C257SE23190, C257SE23145, C257SE23145, C257S023000, C257SE23193

Reexamination Certificate

active

07154173

ABSTRACT:
This invention miniaturizes a package of a semiconductor device and simplifies a manufacturing procedure to reduce a manufacturing cost. A semiconductor wafer formed of a plurality of semiconductor chips formed with MEMS devices and wiring thereof on front surface thereof and a cap arrayed wafer disposed with a plurality of sealing caps are attached to seal the MEMS devices in cavities between them. Then, a plurality of via-holes is provided penetrating through the semiconductor wafer to form embedded electrodes therein, and bump electrodes are formed thereon. After this procedure, this structure is cut along scribe lines to be divided into each of packages.

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