Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-02-01
2005-02-01
Deo, Duy-Vu N. (Department: 1765)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S636000, C257S637000, C438S620000, C438S626000, C438S629000, C438S631000, C438S672000
Reexamination Certificate
active
06849923
ABSTRACT:
Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the wiring layer equal to the first wiring structure and including a second plug and a second wiring formed on the second plug, wherein the upper surface of the first wiring is positioned higher than the upper surface of the second wiring, and the lower surface of the first wiring is positioned flush with or lower than the upper surface of the second wiring. The present invention also provides a method of manufacturing the particular semiconductor device.
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Copy of Korean Office Action dated Feb. 28, 2002 and copy of English-language translation thereof.
Nakamura Naofumi
Sekine Makoto
Seta Shoji
Deo Duy-Vu N.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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