Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2011-03-29

2011-03-29

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S350000, C257S316000

Reexamination Certificate

active

07915680

ABSTRACT:
A semiconductor device comprises: a channel region of a transistor formed in a predetermined region of silicon layer formed on insulation film; a gate electrode formed on the channel region via gate insulation film; and source/drain regions formed in the silicon layer thicker than said channel region located out of the channel region, wherein the transistor is a memory element constituting the channel region as a floating body cell.

REFERENCES:
patent: 5982004 (1999-11-01), Sin et al.
patent: 6621725 (2003-09-01), Ohsawa
patent: 6864540 (2005-03-01), Divakaruni et al.
patent: 2001-298171 (2001-10-01), None
patent: 2005-259494 (2005-09-01), None
Office Action issued Sep. 24, 2010, in Japanese Patent Application No. 2005-259494 filed Sep. 7, 2005 (w/English language translation).

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