Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2011-01-11

2011-01-11

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

C257S218000, C257S368000, C257SE29297

Reexamination Certificate

active

07868425

ABSTRACT:
Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019cm−3or less.

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