Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S378000, C257S381000, C257SE21090, C438S383000
Reexamination Certificate
active
07928515
ABSTRACT:
A semiconductor device includes a dual gate CMOS logic circuit having gate electrodes with different conducting types and a trench capacitor type memory on a same substrate includes a trench of the substrate for the trench capacitor, a dielectric film formed in the trench, a first poly silicon film formed inside of the trench, and a cell plate electrode located above the dielectric film. The cell plate electrode includes a first poly silicon film formed on the dielectric film partially filling the trench, and a second poly silicon film formed on the first poly silicon film to completely fill the trench. The second poly silicon film includes a sufficient film thickness for forming gate electrodes, wherein the impurity concentration of the first poly silicon film is higher than the impurity concentration of the second poly silicon film.
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International Search Report of PCT/JP2005/022793, date of mailing Mar. 14, 2006.
Asano Masayoshi
Ito Tetsuya
Suzuki Yoshiyuki
Wada Hajime
Fujitsu Patent Center
Fujitsu Semiconductor Limited
Nguyen Thinh T
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