Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-15
2009-02-17
Nguyen, Dao H. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S358000, C257S360000, C257SE21619, C257SE29176, C438S224000, C438S309000
Reexamination Certificate
active
07492011
ABSTRACT:
To present a semiconductor device mounting ESD protective device appropriately applicable to transistors mutually different in dielectric strength, and its manufacturing method. The semiconductor device comprises a first ESD protective circuit1A including a first transistor3and a first ballast resistance4, and a second ESD protective circuit1B including a second transistor5and a second ballast resistance6. The impurity concentration of the second diffusion region forming the first ballast resistance4is set lower than the impurity concentration of the fourth diffusion region for forming the second ballast resistance6.
REFERENCES:
patent: 5874763 (1999-02-01), Ham
patent: 6897536 (2005-05-01), Nomura et al.
patent: 2006/0001097 (2006-01-01), Nomura et al.
patent: 2002-134630 (2002-05-01), None
patent: 2004-15003 (2004-01-01), None
Hashimoto Kenji
Nomura Toshio
Suzuki Teruo
Fujitsu Limited
Nguyen Dao H.
Westerman, Hattori, Daniels & Adrian , LLP.
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