Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S412000, C257S401000
Reexamination Certificate
active
06879001
ABSTRACT:
Dummy gate patterns111, 112are formed on a silicon active layer103of an SOI substrate, and thereafter, these dummy gate patterns111, 112are removed to form gate grooves130, 132. A threshold voltage of each transistor is adjusted by etching a silicon active layer103in any one of these gate grooves130, 132to reduce a thickness of a portion constituting a channel region. This enables the enhancement of freedom degree and so on in circuit designing according to conditions.
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Office Action issued by Chinese Patent Office in Application No. 03121578.5, Aug. 6, 2004.
Saito Tomohiro
Yagishita Atsushi
Finnegan, Henderson, Farabow, Garrett & Dunner, L.LP.
Kabushiki Kaisha Toshiba
Prenty Mark V.
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