Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2010-08-10
2011-10-18
Mandala, Victor A (Department: 2826)
Semiconductor device manufacturing: process
Making passive device
C438S238000, C438S458000, C438S759000, C257S531000, C257S528000, C257S679000, C257SE21022, C257SE21025, C257SE21034, C257SE21601
Reexamination Certificate
active
08039353
ABSTRACT:
The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
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Aoki Tomoyuki
Dozen Yoshitaka
Kusumoto Naoto
Ogita Kaori
Sugiyama Eiji
Mandala Victor A
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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