Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-18
2011-01-18
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C257S779000
Reexamination Certificate
active
07871917
ABSTRACT:
To provide a low-cost, easy-to-use, and efficient method for manufacturing a semiconductor device, which eliminates the need for the formation or removal of barrier metals upon formation of bumps, and a high-performance semiconductor device with fine bumps arranged at a narrow pitch. The method includes: forming a plurality of electrode pads12on one surface of a semiconductor substrate10; forming insulating layers (e.g., inorganic insulating layer14and organic insulating layer16) to cover the perimeter of each electrode pad12; selectively forming a mask layer20on the insulating layers14and16; cleaning the surface of the electrode pads12which is not covered with the insulating layers14and16; forming external terminals46in regions defined by the insulating layers14and16and mask layer20so that they are in contact with the electrode pads12; and removing the mask layer20.
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Fujitsu Semiconductor Limited
Toledo Fernando L
Westerman Hattori Daniels & Adrian LLP
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