Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S630000, C438S649000, C438S651000, C438S655000
Reexamination Certificate
active
10281306
ABSTRACT:
In a method of manufacturing a semiconductor device, a first wiring line composed of a copper containing metal film is formed on or above a semiconductor substrate. A first interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the first wiring line. The first interlayer insulating film is selectively removed to form a connection hole reaching the first wiring line. A barrier metal film is formed to cover an inner surface of the connection hole and then a copper containing metal film is formed to fill the connection hole. The copper containing metal film formed outside the connection hole is removed. A second interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the copper containing metal film formed in the connection hole. The second interlayer insulating film is selectively removed to form a wiring line groove such that the copper containing metal film formed in the connection hole is exposed at a bottom. A barrier metal film is formed to cover an inside of the wiring line groove and then a copper containing metal film is formed to fill the wiring line groove. Then, the copper containing metal film outside the wiring line groove is removed to form a second wiring line.
REFERENCES:
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 6181013 (2001-01-01), Liu et al.
patent: 6211084 (2001-04-01), Ngo et al.
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6358838 (2002-03-01), Furusawa et al.
patent: 6391774 (2002-05-01), Takewaki
patent: 6492266 (2002-12-01), Ngo et al.
patent: 6509273 (2003-01-01), Imai et al.
patent: 2001/0053592 (2001-12-01), Sone
patent: 1203450 (1998-12-01), None
patent: 1307363 (2001-08-01), None
patent: 9-232312 (1997-09-01), None
patent: 9-255687 (1997-09-01), None
patent: 9-321045 (1997-12-01), None
patent: 10-116909 (1998-05-01), None
patent: 2809196 (1998-07-01), None
patent: 11-330023 (1999-11-01), None
patent: 2000-58544 (2000-02-01), None
patent: 2000-150517 (2000-05-01), None
patent: 2000-306996 (2000-11-01), None
patent: 2001-118924 (2001-04-01), None
patent: 2001-345317 (2001-12-01), None
patent: 2002-9150 (2002-01-01), None
patent: 2002-50690 (2002-02-01), None
1998 Semiconductor Technology Outlook, pp. 431-435.
Hironaga Nobuo
Kunishima Hiroyuki
Takewaki Toshiyuki
Yamamoto Yoshiaki
NEC Electronics Corporation
Sughrue & Mion, PLLC
Vu Hung
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